IRG7CH73UEF-R
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electrical signals in power electronics applications - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: TO-220AB - Essence: Silicon-based power MOSFET - Packaging/Quantity: Typically sold in reels or tubes containing multiple units
Specifications: - Voltage Rating: 650V - Current Rating: 75A - On-State Resistance: 0.065 ohms - Gate Charge: 60nC - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - High voltage capability suitable for power applications - Low on-state resistance minimizes power dissipation - Fast switching speed enables efficient operation in high-frequency circuits
Advantages: - High voltage and current ratings - Low on-state resistance - Fast switching speed
Disadvantages: - Higher gate charge compared to some alternative models - Limited operating temperature range
Working Principles: The IRG7CH73UEF-R operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.
Detailed Application Field Plans: - Industrial motor drives - Power supplies - Renewable energy systems - Electric vehicles
Detailed and Complete Alternative Models: - Infineon IPP075N06N - STMicroelectronics STP75NF75
This comprehensive entry provides a detailed overview of the IRG7CH73UEF-R, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
What is IRG7CH73UEF-R?
What are the key features of IRG7CH73UEF-R?
In what applications can IRG7CH73UEF-R be used?
What are the advantages of using IRG7CH73UEF-R in technical solutions?
What is the maximum operating voltage and current rating of IRG7CH73UEF-R?
How does IRG7CH73UEF-R compare to other IGBTs in terms of performance?
Are there any specific thermal considerations when using IRG7CH73UEF-R?
Can IRG7CH73UEF-R be used in parallel configurations for higher power applications?
What are the typical control and protection features associated with IRG7CH73UEF-R?
Where can I find detailed application notes and reference designs for implementing IRG7CH73UEF-R in technical solutions?