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IRFH5106TR2PBF

IRFH5106TR2PBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electrical signals in power electronics applications - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: PQFN (Power Quad Flat No-Lead) package - Essence: Efficient power management and control - Packaging/Quantity: Tape and reel packaging, quantity varies by manufacturer

Specifications: - Voltage Rating: 60V - Current Rating: 100A - On-State Resistance: 1.5mΩ - Gate Threshold Voltage: 2V - Package Type: PQFN 5x6

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Source - Pin 3: Drain - Pin 4: Drain - Pin 5: Source

Functional Features: - High voltage and current handling capacity - Low on-state resistance for minimal power loss - Fast switching speed for efficient power control

Advantages: - High efficiency in power management - Compact PQFN package for space-saving designs - Suitable for high-power applications

Disadvantages: - Sensitive to overvoltage conditions - May require additional protection circuitry in certain applications

Working Principles: The IRFH5106TR2PBF operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the source and drain terminals.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models: - Infineon IPP110N06L3 - Vishay SIHP06N60E-GE3 - ON Semiconductor NVMFS5C628NLAFT1G

This comprehensive entry provides a detailed overview of the IRFH5106TR2PBF Power MOSFET, including its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IRFH5106TR2PBF i tekniska lösningar

  1. What is the IRFH5106TR2PBF?

    • The IRFH5106TR2PBF is a power MOSFET designed for high efficiency and compact designs in various technical solutions.
  2. What is the maximum voltage rating of the IRFH5106TR2PBF?

    • The IRFH5106TR2PBF has a maximum voltage rating of 60V, making it suitable for a wide range of applications.
  3. What is the maximum current rating of the IRFH5106TR2PBF?

    • The IRFH5106TR2PBF has a maximum continuous drain current rating of 42A, enabling it to handle high-power applications.
  4. What are the typical applications of the IRFH5106TR2PBF?

    • The IRFH5106TR2PBF is commonly used in DC-DC converters, synchronous buck converters, motor control, and other power management applications.
  5. What is the on-state resistance (RDS(on)) of the IRFH5106TR2PBF?

    • The on-state resistance of the IRFH5106TR2PBF is typically very low, around 4.5 milliohms, ensuring minimal power loss and high efficiency.
  6. Does the IRFH5106TR2PBF require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required to ensure optimal thermal performance.
  7. Is the IRFH5106TR2PBF suitable for automotive applications?

    • Yes, the IRFH5106TR2PBF is designed to meet the requirements of automotive applications, including those with high temperature and reliability demands.
  8. What are the key features of the IRFH5106TR2PBF?

    • The IRFH5106TR2PBF features low RDS(on), fast switching speed, and a small form factor, making it ideal for space-constrained designs.
  9. Can the IRFH5106TR2PBF be used in parallel to increase current handling capability?

    • Yes, the IRFH5106TR2PBF can be used in parallel to increase the overall current handling capability in high-power applications.
  10. Where can I find detailed technical specifications and application notes for the IRFH5106TR2PBF?

    • Detailed technical specifications and application notes for the IRFH5106TR2PBF can be found in the product datasheet provided by the manufacturer or distributor.