IR2113STR
Product Overview
Category: Integrated Circuit (IC)
Use: The IR2113STR is a high voltage, high-speed power MOSFET and IGBT driver IC. It is specifically designed to drive both the high-side and low-side switches in half-bridge and full-bridge configurations.
Characteristics: - High voltage capability - Fast switching speed - Low power consumption - Compact package size - Robust protection features
Package: SOIC-16
Essence: The IR2113STR is an essential component in power electronics applications where efficient and reliable switching of high-power devices is required.
Packaging/Quantity: The IR2113STR is typically sold in reels containing 2500 units.
Specifications
- Supply Voltage Range: 10V - 20V
- Output Current: ±2A
- Propagation Delay: 120ns
- Operating Temperature Range: -40°C to +125°C
Pin Configuration
The IR2113STR has a total of 16 pins arranged as follows:
```
| | | 1 2 3 | | | | 4 5 6 | | | | 7 8 9 | | | | 10 11 12 | | | | 13 14 15 | |_______________| ```
Pin Description: 1. VCC - Power supply voltage input 2. VB - Bootstrap supply voltage input for high-side gate driver 3. HO - High-side gate driver output 4. LO - Low-side gate driver output 5. VS - High-side floating supply return 6. COM - Common connection for bootstrap capacitor and high-side gate driver 7. SD - Shutdown input (active low) 8. VS - High-side floating supply return 9. HO - High-side gate driver output 10. LO - Low-side gate driver output 11. VB - Bootstrap supply voltage input for high-side gate driver 12. VCC - Power supply voltage input 13. GND - Ground reference 14. IN - Logic input 15. IN - Logic input 16. GND - Ground reference
Functional Features
- High voltage level shifting capability
- Integrated bootstrap diode for high-side gate drive
- Under-voltage lockout protection
- Over-current shutdown protection
- Short-circuit protection
- Cross-conduction prevention
Advantages and Disadvantages
Advantages: - Enables efficient and reliable switching of high-power devices - Compact package size allows for space-saving designs - Robust protection features enhance system reliability - Fast switching speed minimizes power losses
Disadvantages: - Requires external components for proper operation - Limited output current may not be suitable for extremely high-power applications
Working Principles
The IR2113STR operates by receiving logic inputs to control the high-side and low-side gate drivers. It utilizes a bootstrap capacitor to generate the necessary voltage for driving the high-side switch. The integrated protection features ensure safe operation by monitoring various parameters such as under-voltage, over-current, and short-circuit conditions.
Detailed Application Field Plans
The IR2113STR is widely used in various power electronics applications, including: - Motor drives - Switch-mode power supplies - Inverters - Uninterruptible power supplies (UPS) - Solar inverters - Electric vehicle charging systems
Alternative Models
- IR2110STR
- IR2104S
- IRS21844SPBF
- MCP1407-E/P
These alternative models offer similar functionality and can be considered as replacements for the IR2113STR in specific applications.
In conclusion, the IR2113STR is a high voltage, high-speed power MOSFET and IGBT driver IC. It offers efficient and reliable switching capabilities for various power electronics applications. With its compact size and robust protection features, it is a popular choice among designers in the field.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IR2113STR i tekniska lösningar
Sure! Here are 10 common questions and answers related to the application of IR2113STR in technical solutions:
Q: What is IR2113STR? A: IR2113STR is a high voltage, high-speed power MOSFET and IGBT driver IC (integrated circuit) commonly used in motor control and power conversion applications.
Q: What is the maximum supply voltage for IR2113STR? A: The maximum supply voltage for IR2113STR is typically around 20V.
Q: Can IR2113STR drive both high-side and low-side MOSFETs or IGBTs? A: Yes, IR2113STR can drive both high-side and low-side MOSFETs or IGBTs, making it suitable for full-bridge or half-bridge configurations.
Q: What is the output current capability of IR2113STR? A: IR2113STR has a peak output current capability of up to 2A, which allows it to drive power devices with relatively high gate capacitance.
Q: Is IR2113STR compatible with TTL/CMOS logic levels? A: Yes, IR2113STR is compatible with both TTL (Transistor-Transistor Logic) and CMOS (Complementary Metal-Oxide-Semiconductor) logic levels, making it easy to interface with microcontrollers or other digital circuits.
Q: Does IR2113STR have built-in protection features? A: Yes, IR2113STR includes various protection features such as under-voltage lockout (UVLO), over-current protection (OCP), and shoot-through protection to prevent damage to the power devices.
Q: What is the typical operating frequency range for IR2113STR? A: The typical operating frequency range for IR2113STR is between a few kilohertz (kHz) to several megahertz (MHz), depending on the application and external components.
Q: Can IR2113STR be used in high-temperature environments? A: Yes, IR2113STR is designed to operate reliably in high-temperature environments and can handle temperatures up to 150°C.
Q: What is the recommended layout and decoupling guidelines for IR2113STR? A: The datasheet of IR2113STR provides detailed guidelines for layout and decoupling, including recommendations for minimizing noise and optimizing performance.
Q: Where can I find additional resources and application notes for IR2113STR? A: You can find additional resources, including datasheets, application notes, and reference designs, on the manufacturer's website or by contacting their technical support team.