IR2112-2PBF

Product Overview

Category: Integrated Circuit (IC)

Use: The IR2112-2PBF is a high voltage, high-speed power MOSFET and IGBT driver IC. It is specifically designed for driving MOSFETs and IGBTs in applications such as motor drives, inverters, and power supplies.

Characteristics: - High voltage capability - High-speed switching - Low power consumption - Compact package size - Robust protection features

Package: The IR2112-2PBF is available in a compact 8-pin DIP (Dual Inline Package) or SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of the IR2112-2PBF lies in its ability to provide reliable and efficient drive signals to control power MOSFETs and IGBTs, enabling precise switching and control of high-power devices.

Packaging/Quantity: The IR2112-2PBF is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Supply Voltage: 10V - 20V
• Output Current: ±2A
• Operating Temperature Range: -40°C to +125°C
• Propagation Delay Time: 120ns (typical)
• Rise/Fall Time: 25ns (typical)
• Maximum Duty Cycle: 50%
• Output Resistance: 1.5Ω (typical)

Pin Configuration

The IR2112-2PBF features an 8-pin package with the following pin configuration:

1. VCC: Positive supply voltage
2. VB: High-side floating supply voltage
3. HO: High-side gate driver output
4. LO: Low-side gate driver output
5. COM: Common connection for low-side and high-side drivers
6. LIN: Logic input for low-side driver
7. HB: High-side floating supply voltage
8. VS: Negative supply voltage

Functional Features

• High voltage level shifting
• Undervoltage lockout protection
• Overcurrent shutdown protection
• Shoot-through prevention logic
• Fault status indication
• Bootstrap capacitor charge management

Advantages and Disadvantages

Advantages: - High voltage capability allows driving of power MOSFETs and IGBTs in high-power applications. - High-speed switching enables efficient control of switching devices. - Robust protection features ensure safe operation and prevent damage to the IC and connected devices. - Compact package size saves board space and facilitates integration into various systems.

Disadvantages: - Limited output current may restrict usage in certain high-power applications. - Requires external components such as bootstrap capacitors for proper operation.

Working Principles

The IR2112-2PBF operates by receiving logic input signals and generating corresponding gate drive signals for the high-side and low-side power devices. It utilizes a high-voltage level shifting technique to provide the necessary drive voltages for the power MOSFETs or IGBTs. The IC incorporates various protection features, such as undervoltage lockout and overcurrent shutdown, to ensure safe and reliable operation.

Detailed Application Field Plans

The IR2112-2PBF finds extensive use in various applications, including:

1. Motor Drives: The IC is widely employed in motor control systems, enabling precise and efficient control of motor speed and direction.
2. Inverters: It is utilized in inverter circuits to convert DC power to AC power, commonly used in renewable energy systems and industrial applications.
3. Power Supplies: The IR2112-2PBF plays a crucial role in power supply designs, facilitating efficient power conversion and regulation.

Detailed and Complete Alternative Models

1. IR2110: Similar to the IR2112-2PBF, this IC provides high voltage and high-speed switching capabilities for driving power MOSFETs and IGBTs.
2. IRS2113: This alternative model offers additional features such as integrated bootstrap diodes and independent inputs for high-side and low-side drivers.

These alternative models can be considered based on specific application requirements and desired functionalities.

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