Infineon Technologies
Bild kan vara representation.
Se specifikationer för produktinformation.
IPD50P04P4L11ATMA1
Visa detalj Datablad

IPD50P04P4L11ATMA1

Product Overview

Category

The IPD50P04P4L11ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification of signals.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPD50P04P4L11ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 50A
  • On-Resistance (RDS(on)): 4mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 35nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD50P04P4L11ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low power dissipation
  • Enhanced thermal performance
  • High reliability
  • ESD protection

Advantages and Disadvantages

Advantages

  • High efficiency
  • Reduced heat generation
  • Compact design
  • Suitable for high-frequency applications

Disadvantages

  • Sensitivity to voltage spikes
  • Limited maximum current handling capacity

Working Principles

The IPD50P04P4L11ATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Power supplies - Motor control - LED lighting - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPD50P04P4L11ATMA1 include: - IRF4905 - FDP8878 - AOD4184

In conclusion, the IPD50P04P4L11ATMA1 is a versatile power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of electronic applications.

[Word Count: 320]

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD50P04P4L11ATMA1 i tekniska lösningar

  1. What is the maximum drain-source voltage of IPD50P04P4L11ATMA1?

    • The maximum drain-source voltage of IPD50P04P4L11ATMA1 is 40V.

  2. What is the continuous drain current rating of IPD50P04P4L11ATMA1?

    • The continuous drain current rating of IPD50P04P4L11ATMA1 is 50A.

  3. What is the on-state resistance (RDS(on)) of IPD50P04P4L11ATMA1?

    • The on-state resistance (RDS(on)) of IPD50P04P4L11ATMA1 is typically 4mΩ.

  4. What is the gate-source voltage for IPD50P04P4L11ATMA1?

    • The gate-source voltage for IPD50P04P4L11ATMA1 is ±20V.

  5. What are the typical applications for IPD50P04P4L11ATMA1?

    • IPD50P04P4L11ATMA1 is commonly used in power management solutions, motor control, and DC-DC converters.

  6. Is IPD50P04P4L11ATMA1 suitable for automotive applications?

    • Yes, IPD50P04P4L11ATMA1 is designed for automotive applications and meets industry standards for reliability and performance.

  7. Does IPD50P04P4L11ATMA1 have built-in protection features?

    • Yes, IPD50P04P4L11ATMA1 includes built-in protection against overcurrent, overtemperature, and short-circuit conditions.

  8. What is the thermal resistance of IPD50P04P4L11ATMA1?

    • The thermal resistance of IPD50P04P4L11ATMA1 is typically 1.1°C/W.

  9. Can IPD50P04P4L11ATMA1 be used in high-frequency switching applications?

    • Yes, IPD50P04P4L11ATMA1 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.

  10. Are there any recommended layout considerations for using IPD50P04P4L11ATMA1 in a circuit?

    • Yes, it is recommended to follow the layout guidelines provided in the datasheet to optimize performance and minimize parasitic effects.