IPD50N06S4L08ATMA1
Product Overview
Category
The IPD50N06S4L08ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Excellent thermal performance
Package
The IPD50N06S4L08ATMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 50A
- On-Resistance (RDS(on)): 8mΩ
- Power Dissipation (PD): 110W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD50N06S4L08ATMA1 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power loss
- High current-carrying capability
- Suitable for high-frequency switching applications
- Enhanced thermal performance for reliability
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance leads to reduced power dissipation
- Fast switching speed for improved efficiency
- Excellent thermal performance ensures reliability
Disadvantages
- Sensitive to static electricity and voltage spikes
- May require additional circuitry for overvoltage protection
Working Principles
The IPD50N06S4L08ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD50N06S4L08ATMA1 is widely used in the following applications: - Switch-mode power supplies - Motor control systems - DC-DC converters - Inverters - LED lighting drivers
Detailed and Complete Alternative Models
Some alternative models to the IPD50N06S4L08ATMA1 include: - IRF540N - FDP8870 - STP55NF06L
In conclusion, the IPD50N06S4L08ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it a valuable component in modern electronic systems.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD50N06S4L08ATMA1 i tekniska lösningar
What is the maximum drain-source voltage of IPD50N06S4L08ATMA1?
- The maximum drain-source voltage of IPD50N06S4L08ATMA1 is 60V.
What is the continuous drain current rating of IPD50N06S4L08ATMA1?
- The continuous drain current rating of IPD50N06S4L08ATMA1 is 50A.
What is the on-state resistance (RDS(on)) of IPD50N06S4L08ATMA1?
- The on-state resistance (RDS(on)) of IPD50N06S4L08ATMA1 is typically 0.008 ohms.
What is the gate threshold voltage of IPD50N06S4L08ATMA1?
- The gate threshold voltage of IPD50N06S4L08ATMA1 is typically 2V.
What is the power dissipation of IPD50N06S4L08ATMA1?
- The power dissipation of IPD50N06S4L08ATMA1 is 200W.
What are the typical applications for IPD50N06S4L08ATMA1?
- IPD50N06S4L08ATMA1 is commonly used in motor control, DC-DC converters, and high-current switching applications.
What is the operating temperature range of IPD50N06S4L08ATMA1?
- The operating temperature range of IPD50N06S4L08ATMA1 is -55°C to 175°C.
Does IPD50N06S4L08ATMA1 have built-in protection features?
- No, IPD50N06S4L08ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
Is IPD50N06S4L08ATMA1 suitable for automotive applications?
- Yes, IPD50N06S4L08ATMA1 is designed for automotive applications and meets relevant industry standards.
Can IPD50N06S4L08ATMA1 be used in parallel to increase current handling capability?
- Yes, IPD50N06S4L08ATMA1 can be used in parallel to increase current handling capability, but proper thermal management and gate driving considerations are necessary.