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IPD068P03L3GBTMA1
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IPD068P03L3GBTMA1

Introduction

The IPD068P03L3GBTMA1 is a power MOSFET belonging to the category of electronic components. It is commonly used in various electronic devices and systems due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Used for switching and amplifying electronic signals in various applications.
  • Characteristics: High power handling capacity, low on-state resistance, fast switching speed.
  • Package: TO-252-3 package
  • Essence: Efficient power management and signal control
  • Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer and distributor.

Specifications

  • Voltage Rating: 30V
  • Current Rating: 6.8A
  • On-State Resistance: 0.068 ohms
  • Power Dissipation: 2.5W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPD068P03L3GBTMA1 follows the standard pin configuration for a TO-252-3 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Fast switching speed for efficient signal control
  • Low on-state resistance for minimal power loss
  • High power handling capacity for robust performance

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Fast response time
  • Low power dissipation

Disadvantages

  • Sensitive to voltage spikes
  • Limited current handling compared to higher-rated MOSFETs

Working Principles

The IPD068P03L3GBTMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPD068P03L3GBTMA1 finds extensive use in the following application fields: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPD068P03L3GBTMA1 include: - IRF4905PbF - FQP30N06L - NDP6020P

In conclusion, the IPD068P03L3GBTMA1 is a versatile power MOSFET with a range of applications and performance characteristics that make it suitable for various electronic designs and systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD068P03L3GBTMA1 i tekniska lösningar

  1. What is the maximum drain-source voltage of IPD068P03L3GBTMA1?

    • The maximum drain-source voltage of IPD068P03L3GBTMA1 is 30V.

  2. What is the continuous drain current rating of IPD068P03L3GBTMA1?

    • The continuous drain current rating of IPD068P03L3GBTMA1 is 120A.

  3. What is the on-state resistance (RDS(on)) of IPD068P03L3GBTMA1?

    • The on-state resistance (RDS(on)) of IPD068P03L3GBTMA1 is typically 6.8mΩ.

  4. What is the gate threshold voltage of IPD068P03L3GBTMA1?

    • The gate threshold voltage of IPD068P03L3GBTMA1 is typically 2.5V.

  5. What is the maximum power dissipation of IPD068P03L3GBTMA1?

    • The maximum power dissipation of IPD068P03L3GBTMA1 is 100W.

  6. What are the recommended operating temperature range for IPD068P03L3GBTMA1?

    • The recommended operating temperature range for IPD068P03L3GBTMA1 is -55°C to 175°C.

  7. Does IPD068P03L3GBTMA1 have built-in ESD protection?

    • Yes, IPD068P03L3GBTMA1 has built-in ESD protection.

  8. What type of package does IPD068P03L3GBTMA1 come in?

    • IPD068P03L3GBTMA1 comes in a TO-252-3 package.

  9. Is IPD068P03L3GBTMA1 suitable for automotive applications?

    • Yes, IPD068P03L3GBTMA1 is suitable for automotive applications.

  10. What are some typical applications for IPD068P03L3GBTMA1?

    • Some typical applications for IPD068P03L3GBTMA1 include motor control, power management, and battery protection in various electronic devices.