IPB031N08N5ATMA1
Product Overview
Category
The IPB031N08N5ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switch in various electronic circuits and power applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPB031N08N5ATMA1 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 80V
- Continuous Drain Current (ID): 100A
- On-Resistance (RDS(on)): 3.1mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB031N08N5ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
Advantages
- Excellent thermal performance
- High current-carrying capability
- Suitable for high-frequency applications
Disadvantages
- Sensitive to static electricity
- May require additional protection circuitry in certain applications
Working Principles
The IPB031N08N5ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB031N08N5ATMA1 is widely used in: - Switching power supplies - Motor control - Battery management systems - LED lighting - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the IPB031N08N5ATMA1 include: - IRF1405PbF - FDP8878 - AUIRFN8409
In conclusion, the IPB031N08N5ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of power applications. Its high voltage capability, low on-resistance, and fast switching speed make it an ideal choice for efficient power management and control in various electronic systems.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPB031N08N5ATMA1 i tekniska lösningar
What is the maximum drain-source voltage of IPB031N08N5ATMA1?
- The maximum drain-source voltage of IPB031N08N5ATMA1 is 80V.
What is the continuous drain current rating of IPB031N08N5ATMA1?
- The continuous drain current rating of IPB031N08N5ATMA1 is 100A.
What is the on-state resistance (RDS(on)) of IPB031N08N5ATMA1?
- The on-state resistance (RDS(on)) of IPB031N08N5ATMA1 is typically 3.1mΩ at VGS = 10V.
What is the gate threshold voltage of IPB031N08N5ATMA1?
- The gate threshold voltage of IPB031N08N5ATMA1 is typically 2.5V.
Can IPB031N08N5ATMA1 be used in automotive applications?
- Yes, IPB031N08N5ATMA1 is designed for use in automotive applications.
What is the operating temperature range of IPB031N08N5ATMA1?
- The operating temperature range of IPB031N08N5ATMA1 is -55°C to 175°C.
Does IPB031N08N5ATMA1 have built-in ESD protection?
- Yes, IPB031N08N5ATMA1 features built-in ESD protection.
Is IPB031N08N5ATMA1 suitable for high-frequency switching applications?
- Yes, IPB031N08N5ATMA1 is suitable for high-frequency switching applications.
What package type does IPB031N08N5ATMA1 come in?
- IPB031N08N5ATMA1 is available in a TO-263-7 package.
Are there any application notes or reference designs available for using IPB031N08N5ATMA1 in technical solutions?
- Yes, Infineon provides application notes and reference designs for using IPB031N08N5ATMA1 in various technical solutions.