IHW20N65R5XKSA1
Product Overview
Category
The IHW20N65R5XKSA1 belongs to the category of power MOSFETs.
Use
It is used for high-power applications such as in power supplies, motor control, and inverters.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- High reliability
Package
The IHW20N65R5XKSA1 is available in a TO-247 package.
Essence
This MOSFET is essential for efficient power management in various electronic systems.
Packaging/Quantity
It is typically sold in reels with a specific quantity per reel.
Specifications
- Voltage Rating: 650V
- Current Rating: 20A
- On-Resistance: 0.165 ohms
- Gate Threshold Voltage: 4V
- Total Gate Charge: 45nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IHW20N65R5XKSA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low conduction losses
- High efficiency
- Enhanced thermal performance
- Robustness against overcurrent and overvoltage conditions
Advantages
- High voltage capability allows for use in demanding applications
- Low on-resistance minimizes power dissipation
- Fast switching speed enables efficient operation
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Requires careful handling due to its high voltage rating
Working Principles
The IHW20N65R5XKSA1 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is suitable for use in: - Switch-mode power supplies - Motor drives - Solar inverters - Uninterruptible power supplies (UPS) - Electric vehicle powertrains
Detailed and Complete Alternative Models
Some alternative models to the IHW20N65R5XKSA1 include: - IRFP4668PbF - STW20NM60 - FDPF20N60NT
In conclusion, the IHW20N65R5XKSA1 is a high-voltage power MOSFET with excellent characteristics for demanding applications, making it a preferred choice for various power management needs.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IHW20N65R5XKSA1 i tekniska lösningar
What is the maximum voltage rating of IHW20N65R5XKSA1?
- The maximum voltage rating of IHW20N65R5XKSA1 is 650V.
What is the continuous drain current of IHW20N65R5XKSA1?
- The continuous drain current of IHW20N65R5XKSA1 is 20A.
What is the on-state resistance (RDS(on)) of IHW20N65R5XKSA1?
- The on-state resistance (RDS(on)) of IHW20N65R5XKSA1 is 0.065 ohms.
Can IHW20N65R5XKSA1 be used in high-frequency switching applications?
- Yes, IHW20N65R5XKSA1 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
What is the maximum junction temperature of IHW20N65R5XKSA1?
- The maximum junction temperature of IHW20N65R5XKSA1 is 150°C.
Is IHW20N65R5XKSA1 suitable for automotive applications?
- Yes, IHW20N65R5XKSA1 is designed for automotive applications and meets the necessary standards and requirements.
Does IHW20N65R5XKSA1 require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal performance of IHW20N65R5XKSA1.
What are the typical gate charge characteristics of IHW20N65R5XKSA1?
- The typical gate charge characteristics of IHW20N65R5XKSA1 are provided in the datasheet and should be considered for driving the MOSFET effectively.
Can IHW20N65R5XKSA1 be used in parallel to increase current handling capability?
- Yes, IHW20N65R5XKSA1 can be used in parallel to increase current handling capability, but proper attention should be given to balancing the current sharing among the devices.
Are there any application notes or reference designs available for using IHW20N65R5XKSA1 in technical solutions?
- Yes, application notes and reference designs are available from the manufacturer to guide the effective use of IHW20N65R5XKSA1 in various technical solutions.