BGT60E6327XTSA1

Basic Information Overview

• Category: Electronic Component
• Use: Amplifier
• Characteristics: High power, high frequency
• Package: SMD (Surface Mount Device)
• Essence: Gallium Nitride (GaN) Transistor
• Packaging/Quantity: Tape and Reel, 1000 units per reel

Specifications

• Power Rating: 60 Watts
• Frequency Range: DC to 6 GHz
• Voltage Rating: 28 Volts
• Current Rating: 3.5 Amps
• Gain: 15 dB
• Efficiency: 70%
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The BGT60E6327XTSA1 has the following pin configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

• High power amplification for RF applications
• Wide frequency range coverage
• Low noise figure
• High linearity
• Excellent thermal management

Advantages

• High power output capability
• Broad frequency coverage
• Compact size
• Efficient power consumption
• Good thermal performance

Disadvantages

• Relatively higher cost compared to traditional transistors
• Sensitive to electrostatic discharge (ESD)
• Requires careful handling during installation

Working Principles

The BGT60E6327XTSA1 is a GaN transistor that operates based on the principles of field-effect transistors (FETs). It utilizes the unique properties of Gallium Nitride to provide high power amplification in RF applications. The gate voltage controls the flow of current between the drain and source, enabling signal amplification.

Detailed Application Field Plans

The BGT60E6327XTSA1 finds applications in various fields, including: 1. Telecommunications: Power amplifiers for cellular base stations, wireless communication systems. 2. Radar Systems: High-frequency amplification for radar signal processing. 3. Satellite Communication: Amplification of RF signals in satellite transponders. 4. Test and Measurement: Signal amplification in RF test equipment.

Detailed and Complete Alternative Models

1. BGT60E6327XTRSA1: Similar specifications, but with a different packaging option (Tape and Reel, 250 units per reel).
2. BGT50FETR: Lower power rating (50 Watts), suitable for applications with lower power requirements.
3. BGT45FETRA1: Higher frequency range (DC to 10 GHz), ideal for applications requiring wider bandwidth.

Note: The above alternative models are provided as examples and may not cover all available options.

This entry provides an overview of the BGT60E6327XTSA1, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. With its high power and frequency capabilities, this GaN transistor is well-suited for various RF amplification applications.