IDT71V65802ZS133BG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: Ball Grid Array (BGA)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Type: Synchronous SRAM
• Density: 8 Megabits (1 Megabyte)
• Organization: 512K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 133 MHz
• Data Retention: Greater than 10 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V65802ZS133BG8 has a total of 119 pins. The pin configuration is as follows:

• Pin 1: VDDQ (Power Supply)
• Pin 2: DQ0 (Data Input/Output Bit 0)
• Pin 3: DQ1 (Data Input/Output Bit 1)
• ...
• Pin 118: GND (Ground)
• Pin 119: VDD (Power Supply)

Functional Features

• High-speed operation allows for fast data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface ensures efficient communication with the host system.
• Easy integration into existing circuit designs due to standard pin configuration.
• Automatic power-down mode reduces power consumption during idle periods.

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfer. - Easy integration into existing circuit designs simplifies product development.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to non-volatile memory options. - Vulnerable to data loss in case of power failure or system malfunction.

Working Principles

The IDT71V65802ZS133BG8 operates based on the principles of synchronous SRAM. It stores and retrieves data using a clock signal that synchronizes the input and output operations. The memory cells are organized in a matrix, with each cell capable of storing one bit of data. When a read or write operation is initiated, the address of the desired memory location is provided, and the corresponding data is accessed or stored.

Detailed Application Field Plans

The IDT71V65802ZS133BG8 is widely used in various electronic devices that require high-speed data storage and retrieval capabilities. Some common application fields include:

1. Networking equipment: Used as cache memory in routers and switches to improve data processing speed.
2. Telecommunications systems: Utilized in base stations and network infrastructure for fast data buffering.
3. Industrial automation: Integrated into control systems for real-time data storage and processing.
4. Automotive electronics: Employed in advanced driver assistance systems (ADAS) and infotainment systems.
5. Consumer electronics: Found in gaming consoles, digital cameras, and high-performance smartphones.

Detailed and Complete Alternative Models

1. IDT71V65802S: Similar to IDT71V65802ZS133BG8 but operates at a lower access time of 100 MHz.
2. Cypress CY7C1041DV33: Offers the same density and organization but operates at a higher voltage of 3.3V.
3. Micron MT48LC16M16A2: Provides double the density with 16 Megabits (2 Megabytes) and operates at a lower voltage of 2.5V.

(Note: The above alternative models are provided for illustrative purposes and may not represent an exhaustive list.)

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