IDT71V3556S100BQG8

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V3556S100BQG8 is a high-speed, low-power 3.3V synchronous static random-access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Synchronous interface - Large storage capacity - Reliable performance

Package: The IDT71V3556S100BQG8 is available in a 100-ball grid array (BGA) package, which provides a compact and reliable form factor for easy integration into electronic circuits.

Essence: This IC serves as a high-performance memory component that enables fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity: The IDT71V3556S100BQG8 is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Operating Voltage: 3.3V
• Memory Size: 4 Megabits (512K x 8)
• Access Time: 10 ns
• Organization: 512K words x 8 bits
• Interface: Synchronous
• Operating Temperature Range: -40°C to +85°C
• Package Type: 100-ball BGA

Detailed Pin Configuration

The IDT71V3556S100BQG8 features a 100-ball BGA package with various pins for different functions. Here is a detailed pin configuration:

1. VDDQ: Power supply voltage for I/O buffers
2. DQ0-DQ7: Data input/output pins
3. A0-A18: Address input pins
4. WE: Write enable pin
5. OE: Output enable pin
6. CE1, CE2: Chip enable pins
7. CLK: Clock input pin
8. VDD: Power supply voltage for core logic
9. GND: Ground

Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for the complete and accurate pinout information.

Functional Features

• High-speed operation: The IDT71V3556S100BQG8 offers fast access times, allowing for quick data retrieval and processing.
• Low power consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient systems.
• Synchronous interface: The synchronous interface ensures synchronized data transfers between the memory and the controlling device.
• Large storage capacity: With a memory size of 4 Megabits, this IC provides ample storage space for various applications.
• Reliable performance: The IDT71V3556S100BQG8 delivers reliable and consistent performance, ensuring data integrity and system stability.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfers. - Large storage capacity accommodates diverse application needs. - Reliable performance ensures data integrity.

Disadvantages: - Limited compatibility with certain older systems or devices that require different voltage levels or interfaces. - Relatively higher cost compared to alternative memory solutions with lower specifications.

Working Principles

The IDT71V3556S100BQG8 operates based on the principles of synchronous static random-access memory (SRAM). It stores data in a volatile manner, meaning the stored information is lost when power is removed. The synchronous interface allows for precise timing control during data transfers, ensuring accurate and synchronized communication between the memory and the controlling device.

Detailed Application Field Plans

The IDT71V3556S100BQG8 finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Its high-speed operation, low power consumption, and reliable performance make it suitable for demanding applications that require fast and efficient data storage and retrieval.

Detailed and Complete Alternative Models

While the IDT71V3556S100BQG8 offers specific features and specifications, there are alternative models available in the market that cater to different requirements. Some notable alternatives include: - Micron MT48LC4M32B2P-7: 4 Megabit synchronous SRAM with a different pin configuration and access time. - Cypress CY62157EV30LL-45ZSXI: 4 Megabit low-power SRAM with a different package type and operating voltage. - Samsung K6R4016V1D-UI10: 4 Megabit high-speed SRAM with a different organization and interface.