IDT, Integrated Device Technology Inc
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IDT71V2576S133PF
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IDT71V2576S133PF

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 100-pin plastic quad flat pack (PQFP)
  • Essence: Stores and retrieves digital information in electronic systems
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Organization: 256K x 18 bits
  • Operating Voltage: 3.3V
  • Access Time: 8.0 ns
  • Clock Frequency: 133 MHz
  • Standby Current: 10 mA (typical)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: 10 years

Detailed Pin Configuration

The IDT71V2576S133PF has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. CLK
  36. CLKEN
  37. CKE
  38. CS0
  39. CS1
  40. WE#
  41. OE#
  42. LB#
  43. UB#
  44. A0
  45. A1
  46. A2
  47. A3
  48. A4
  49. A5
  50. A6
  51. A7
  52. A8
  53. A9
  54. A10
  55. A11
  56. A12
  57. A13
  58. A14
  59. A15
  60. A16
  61. A17
  62. A18
  63. A19
  64. A20
  65. A21
  66. A22
  67. A23
  68. A24
  69. A25
  70. A26
  71. A27
  72. A28
  73. A29
  74. A30
  75. A31
  76. VDD
  77. VSS
  78. NC
  79. NC
  80. NC
  81. NC
  82. NC
  83. NC
  84. NC
  85. NC
  86. NC
  87. NC
  88. NC
  89. NC
  90. NC
  91. NC
  92. NC
  93. NC
  94. NC
  95. NC
  96. NC
  97. NC
  98. NC
  99. NC
  100. NC

Functional Features

  • High-speed operation: The IDT71V2576S133PF offers fast access times, making it suitable for applications that require quick data retrieval.
  • Low-power consumption: This memory device is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
  • Synchronous operation: The device synchronizes data transfers with an external clock signal, ensuring reliable and accurate data communication.
  • Easy integration: The IDT71V2576S133PF can be easily integrated into various electronic systems due to its standard pin configuration and compatibility with industry-standard protocols.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data access - Low-power consumption for energy-efficient applications - Synchronous operation ensures reliable data transfer - Easy integration into existing electronic systems

Disadvantages: - Limited storage capacity compared to other memory devices - Higher cost per bit compared to alternative memory technologies

Working Principles

The IDT71V2576S133PF is a synchronous SRAM that stores digital information using flip-flops. It operates by receiving an external clock signal, which synchronizes the read and write operations. When a read command is issued, the addressed data is retrieved from the memory array and made available on the output pins. Similarly, during a write operation, the input data is stored in the specified memory location. The device uses a combination of

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IDT71V2576S133PF i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of IDT71V2576S133PF in technical solutions:

  1. Question: What is the IDT71V2576S133PF?
    Answer: The IDT71V2576S133PF is a high-speed, low-power CMOS static RAM (SRAM) chip with a capacity of 256K x 16 bits.

  2. Question: What is the operating voltage range for this SRAM chip?
    Answer: The IDT71V2576S133PF operates at a voltage range of 3.0V to 3.6V.

  3. Question: What is the maximum clock frequency supported by this SRAM chip?
    Answer: This SRAM chip supports a maximum clock frequency of 133 MHz.

  4. Question: Can I use this SRAM chip in battery-powered devices?
    Answer: Yes, the IDT71V2576S133PF is designed to be low-power, making it suitable for battery-powered applications.

  5. Question: What is the access time of this SRAM chip?
    Answer: The access time of the IDT71V2576S133PF is 8 ns.

  6. Question: Can I interface this SRAM chip with microcontrollers or processors?
    Answer: Yes, this SRAM chip can be easily interfaced with various microcontrollers and processors using standard memory interfaces.

  7. Question: Does this SRAM chip have any built-in error correction capabilities?
    Answer: No, the IDT71V2576S133PF does not have built-in error correction capabilities.

  8. Question: What is the package type for this SRAM chip?
    Answer: The IDT71V2576S133PF comes in a 48-pin plastic TSOP (Thin Small Outline Package).

  9. Question: Can I use multiple SRAM chips in parallel to increase the memory capacity?
    Answer: Yes, you can use multiple IDT71V2576S133PF chips in parallel to increase the overall memory capacity.

  10. Question: Is this SRAM chip suitable for high-speed data buffering or caching applications?
    Answer: Yes, the IDT71V2576S133PF is well-suited for high-speed data buffering and caching applications due to its fast access time and high clock frequency support.

Please note that these answers are based on general information about the IDT71V2576S133PF and may vary depending on specific application requirements.