IDT, Integrated Device Technology Inc
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IDT71V25761YSA200BGI8
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IDT71V25761YSA200BGI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: Ball Grid Array (BGA)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 256K x 36 bits
  • Operating Voltage: 2.5V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Pin Count: 119

Detailed Pin Configuration

The IDT71V25761YSA200BGI8 has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. VDD
  36. A0
  37. A1
  38. A2
  39. A3
  40. A4
  41. A5
  42. A6
  43. A7
  44. A8
  45. A9
  46. A10
  47. A11
  48. A12
  49. A13
  50. A14
  51. A15
  52. A16
  53. A17
  54. A18
  55. A19
  56. A20
  57. A21
  58. A22
  59. A23
  60. A24
  61. A25
  62. A26
  63. A27
  64. A28
  65. A29
  66. A30
  67. A31
  68. CE#
  69. WE#
  70. OE#
  71. UB#
  72. LB#
  73. ZZ#
  74. ZZ#
  75. ZZ#
  76. ZZ#
  77. ZZ#
  78. ZZ#
  79. ZZ#
  80. ZZ#
  81. ZZ#
  82. ZZ#
  83. ZZ#
  84. ZZ#
  85. ZZ#
  86. ZZ#
  87. ZZ#
  88. ZZ#
  89. ZZ#
  90. ZZ#
  91. ZZ#
  92. ZZ#
  93. ZZ#
  94. ZZ#
  95. ZZ#
  96. ZZ#
  97. ZZ#
  98. ZZ#
  99. ZZ#
  100. ZZ#
  101. ZZ#
  102. ZZ#
  103. ZZ#
  104. ZZ#
  105. ZZ#
  106. ZZ#
  107. ZZ#
  108. ZZ#
  109. ZZ#
  110. ZZ#
  111. ZZ#
  112. ZZ#
  113. ZZ#
  114. ZZ#
  115. ZZ#
  116. ZZ#
  117. ZZ#
  118. ZZ#
  119. VSS

Functional Features

  • High-speed operation: The IDT71V25761YSA200BGI8 offers fast access times, allowing for quick data retrieval and storage.
  • Low-power consumption: Designed to minimize power usage, making it suitable for battery-powered devices or energy-efficient applications.
  • Synchronous operation: The memory operates synchronously with the system clock, ensuring reliable and synchronized data transfers.
  • Large storage capacity: With a density of 256K x 36 bits, this memory device provides ample storage space for various applications.

Advantages and Disadvantages

Advantages

  • Fast access times enable efficient data processing.
  • Low-power consumption prolongs battery life in portable devices.
  • Synchronous operation ensures reliable data transfers.
  • Ample storage capacity accommodates large amounts of data.

Disadvantages

  • Limited compatibility: The parallel interface may not be suitable for all applications.
  • Higher cost compared to other memory technologies.

Working Principles

The IDT71V25761YSA200BGI8 is a synchronous SRAM that stores

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IDT71V25761YSA200BGI8 i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of IDT71V25761YSA200BGI8 in technical solutions:

  1. Question: What is the IDT71V25761YSA200BGI8?
    Answer: The IDT71V25761YSA200BGI8 is a high-speed asynchronous SRAM (Static Random Access Memory) chip with a capacity of 256K x 36 bits.

  2. Question: What are the key features of the IDT71V25761YSA200BGI8?
    Answer: Some key features include a fast access time of 10 ns, low power consumption, and a wide operating voltage range of 3.0V to 3.6V.

  3. Question: What are the typical applications of the IDT71V25761YSA200BGI8?
    Answer: This SRAM chip is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.

  4. Question: Can the IDT71V25761YSA200BGI8 be used in battery-powered devices?
    Answer: Yes, the IDT71V25761YSA200BGI8 has a low power consumption design, making it suitable for battery-powered devices that require high-speed memory.

  5. Question: What is the maximum operating frequency of the IDT71V25761YSA200BGI8?
    Answer: The IDT71V25761YSA200BGI8 can operate at a maximum frequency of 200 MHz, allowing for fast data access and transfer.

  6. Question: Does the IDT71V25761YSA200BGI8 support multiple read and write operations simultaneously?
    Answer: Yes, this SRAM chip supports simultaneous read and write operations, making it suitable for applications that require high-speed data processing.

  7. Question: What is the operating temperature range of the IDT71V25761YSA200BGI8?
    Answer: The IDT71V25761YSA200BGI8 can operate within a temperature range of -40°C to +85°C, making it suitable for various environmental conditions.

  8. Question: Can the IDT71V25761YSA200BGI8 be used in automotive applications?
    Answer: Yes, this SRAM chip is designed to meet automotive industry standards and can be used in automotive applications that require high-speed memory.

  9. Question: Does the IDT71V25761YSA200BGI8 have any built-in error correction capabilities?
    Answer: No, the IDT71V25761YSA200BGI8 does not have built-in error correction capabilities. External error correction techniques may need to be implemented if required.

  10. Question: Are there any specific design considerations when using the IDT71V25761YSA200BGI8?
    Answer: It is important to consider proper decoupling and power supply routing to ensure stable operation. Additionally, timing requirements and signal integrity should be taken into account for optimal performance.

Please note that these answers are general and may vary depending on the specific application and requirements.