IDT, Integrated Device Technology Inc
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IDT71V25761YS200PF
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IDT71V25761YS200PF

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 100-pin thin quad flat pack (TQFP)
  • Essence: Stores and retrieves digital information in electronic systems
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Organization: 32,768 words x 8 bits
  • Voltage Supply: 3.3V ± 0.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Standby Current: 5 mA (typical)
  • Package Dimensions: 14mm x 14mm

Pin Configuration

The IDT71V25761YS200PF has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. CE2#
  44. CE1#
  45. WE#
  46. OE#
  47. UB#
  48. LB#
  49. VDDQ
  50. DQ8
  51. DQ9
  52. DQ10
  53. DQ11
  54. DQ12
  55. DQ13
  56. DQ14
  57. DQ15
  58. GND
  59. A32
  60. A33
  61. A34
  62. A35
  63. A36
  64. A37
  65. A38
  66. A39
  67. A40
  68. A41
  69. A42
  70. A43
  71. A44
  72. A45
  73. A46
  74. A47
  75. A48
  76. A49
  77. A50
  78. A51
  79. A52
  80. A53
  81. A54
  82. A55
  83. A56
  84. A57
  85. A58
  86. A59
  87. A60
  88. A61
  89. A62
  90. A63
  91. CE3#
  92. CE0#
  93. WEA#
  94. OEA#
  95. UBA#
  96. LBA#
  97. VDDQ
  98. DQ16
  99. DQ17
  100. DQ18

Functional Features

  • High-speed operation: The IDT71V25761YS200PF offers fast access times, making it suitable for applications requiring quick data retrieval.
  • Low-power consumption: It is designed to operate efficiently with low power requirements, making it suitable for battery-powered devices.
  • Synchronous operation: The memory operates synchronously with the system clock, ensuring reliable data transfer and synchronization.

Advantages

  • High-speed access allows for efficient data processing in time-critical applications.
  • Low-power consumption extends battery life in portable devices.
  • Synchronous operation ensures reliable data transfer and synchronization.

Disadvantages

  • Limited storage capacity compared to other memory devices.
  • Higher cost per bit compared to some alternative memory technologies.

Working Principles

The IDT71V25761YS200PF is a synchronous SRAM that stores digital information using flip-flops. It operates by receiving address inputs, control signals, and data inputs from the system. The memory cell array is organized into rows and columns, allowing for efficient read and write operations. The synchronous nature of the device ensures proper timing and synchronization with the system clock.

Detailed Application Field Plans

The IDT71V25761YS200PF is commonly used in various applications, including:

  1. Computer systems: Used as cache memory or main memory in high-performance computers.
  2. Networking equipment: Provides fast data buffering and storage in routers

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IDT71V25761YS200PF i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of IDT71V25761YS200PF in technical solutions:

  1. Q: What is IDT71V25761YS200PF? A: IDT71V25761YS200PF is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V25761YS200PF? A: The IDT71V25761YS200PF has a capacity of 256K x 36 bits, which means it can store 256 kilobits of data organized into 36-bit words.

  3. Q: What is the operating voltage range for IDT71V25761YS200PF? A: The IDT71V25761YS200PF operates within a voltage range of 3.135V to 3.465V.

  4. Q: What is the speed rating of IDT71V25761YS200PF? A: The IDT71V25761YS200PF has a speed rating of 200 MHz, indicating its maximum operating frequency.

  5. Q: What is the purpose of IDT71V25761YS200PF in technical solutions? A: IDT71V25761YS200PF is commonly used as a high-speed memory component in various technical solutions, such as networking equipment, telecommunications systems, and embedded systems.

  6. Q: Does IDT71V25761YS200PF support simultaneous read and write operations? A: Yes, IDT71V25761YS200PF supports simultaneous read and write operations, making it suitable for applications that require both reading and writing data at the same time.

  7. Q: Can IDT71V25761YS200PF operate in different temperature ranges? A: Yes, IDT71V25761YS200PF is designed to operate within a wide temperature range, typically from -40°C to +85°C.

  8. Q: Does IDT71V25761YS200PF have any power-saving features? A: Yes, IDT71V25761YS200PF incorporates various power-saving features, such as automatic power-down and self-refresh modes, to minimize power consumption when not actively accessed.

  9. Q: Is IDT71V25761YS200PF compatible with other memory devices? A: Yes, IDT71V25761YS200PF is compatible with other SRAM devices and can be used alongside them in memory subsystems.

  10. Q: Can IDT71V25761YS200PF be used in high-reliability applications? A: Yes, IDT71V25761YS200PF is designed for high-reliability applications and meets industry standards for quality and reliability, making it suitable for critical systems.