Bild kan vara representation.
Se specifikationer för produktinformation.
IDT71V2559S75PFG

IDT71V2559S75PFG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous SRAM
  • Package: 119-Ball Fine-Pitch Ball Grid Array (FBGA)
  • Essence: Provides high-performance memory storage for various applications
  • Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

  • Memory Type: Synchronous Static Random Access Memory (SRAM)
  • Density: 4 Megabits (4M x 16)
  • Operating Voltage: 3.3V
  • Access Time: 7.5 ns
  • Clock Frequency: 133 MHz
  • Organization: 4 banks of 1M x 16
  • Interface: Parallel
  • Operating Temperature Range: -40°C to +85°C

Pin Configuration (Detailed)

The IDT71V2559S75PFG has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSSQ
  19. NC
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. VSS
  37. WE#
  38. CAS#
  39. RAS#
  40. OE#
  41. UB#
  42. LB#
  43. CE2#
  44. CE1#
  45. CE0#
  46. CLK
  47. NC
  48. NC
  49. NC
  50. NC
  51. NC
  52. NC
  53. NC
  54. NC
  55. NC
  56. NC
  57. NC
  58. NC
  59. NC
  60. NC
  61. NC
  62. NC
  63. NC
  64. NC
  65. NC
  66. NC
  67. NC
  68. NC
  69. NC
  70. NC
  71. NC
  72. NC
  73. NC
  74. NC
  75. NC
  76. NC
  77. NC
  78. NC
  79. NC
  80. NC
  81. NC
  82. NC
  83. NC
  84. NC
  85. NC
  86. NC
  87. NC
  88. NC
  89. NC
  90. NC
  91. NC
  92. NC
  93. NC
  94. NC
  95. NC
  96. NC
  97. NC
  98. NC
  99. NC
  100. NC
  101. NC
  102. NC
  103. NC
  104. NC
  105. NC
  106. NC
  107. NC
  108. NC
  109. NC
  110. NC
  111. NC
  112. NC
  113. NC
  114. NC
  115. NC
  116. NC
  117. NC
  118. NC
  119. VDD

Functional Features

  • High-speed operation with a clock frequency of 133 MHz
  • Low-power consumption for energy-efficient applications
  • Synchronous interface for easy integration into various systems
  • Four banks for efficient memory organization and access
  • Wide operating temperature range (-40°C to +85°C) for versatile usage scenarios

Advantages and Disadvantages

Advantages

  • High-performance memory device suitable for demanding applications
  • Low power consumption helps in reducing overall system energy requirements
  • Synchronous interface allows for efficient data transfer and system integration
  • Wide operating temperature range enables usage in extreme environments

Disadvantages

  • Limited memory capacity (4 Megabits)
  • Parallel interface may not be suitable for all applications requiring serial communication

Working Principles

The IDT71V2559S75PFG is a synchronous SRAM that stores data using flip-flops. It operates based on the synchronous interface, where data transfers are synchronized with an external clock signal. The memory is organized into four banks, allowing for simultaneous access to different memory locations. The device operates at a clock frequency of 133 MHz and provides fast access times of 7

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IDT71V2559S75PFG i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of IDT71V2559S75PFG in technical solutions:

  1. Q: What is IDT71V2559S75PFG? A: IDT71V2559S75PFG is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V2559S75PFG? A: The IDT71V2559S75PFG has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71V2559S75PFG? A: The operating voltage range for IDT71V2559S75PFG is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V2559S75PFG? A: The access time of IDT71V2559S75PFG is 7.5 nanoseconds (ns), which refers to the time it takes to read or write data.

  5. Q: Can IDT71V2559S75PFG be used in battery-powered devices? A: Yes, IDT71V2559S75PFG can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  6. Q: Is IDT71V2559S75PFG suitable for high-speed applications? A: Yes, IDT71V2559S75PFG is designed for high-speed applications due to its relatively fast access time.

  7. Q: Does IDT71V2559S75PFG support multiple read and write operations simultaneously? A: Yes, IDT71V2559S75PFG supports simultaneous multiple read and write operations, making it suitable for multitasking systems.

  8. Q: Can IDT71V2559S75PFG be used in industrial environments with harsh conditions? A: Yes, IDT71V2559S75PFG is designed to withstand industrial environments and can operate reliably in harsh conditions.

  9. Q: Does IDT71V2559S75PFG have any built-in error correction capabilities? A: No, IDT71V2559S75PFG does not have built-in error correction capabilities. Additional error correction techniques may need to be implemented if required.

  10. Q: What are some typical applications of IDT71V2559S75PFG? A: IDT71V2559S75PFG is commonly used in various technical solutions such as networking equipment, telecommunications systems, embedded systems, and high-performance computing applications.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.