The 95V857AGLN transistor has the following pin configuration:
Emitter (E) Base (B) Collector (C)
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Advantages: - High voltage rating suitable for power amplification tasks. - Robust construction for reliable performance. - Low distortion ensures faithful signal reproduction.
Disadvantages: - Limited current rating compared to some other transistors. - Higher cost compared to lower voltage alternatives.
The 95V857AGLN transistor is commonly used in audio amplifiers, power supplies, and industrial control systems where high voltage amplification is required.
The 95V857AGLN transistor operates based on the principles of bipolar junction transistor (BJT). It consists of three layers of semiconductor material, namely the emitter, base, and collector. By controlling the current flowing through the base terminal, the transistor can amplify signals at the collector terminal.
Q: What is the maximum voltage this transistor can handle? A: The 95V857AGLN has a voltage rating of 95V.
Q: Can this transistor handle high power applications? A: Yes, it has a power dissipation rating of 80W.
Q: What is the typical gain of this transistor? A: The DC current gain ranges from 50 to 100.
Q: Is this transistor suitable for high-frequency applications? A: No, its transition frequency is 150MHz, which may limit its performance in high-frequency applications.
Q: What is the operating temperature range of this transistor? A: It can operate within a temperature range of -55°C to +150°C.
This encyclopedia entry provides an overview of the 95V857AGLN transistor, including its basic information, specifications, pin configuration, functional characteristics, advantages and disadvantages, applicable range of products, working principles, detailed application field plans, alternative models, and common technical questions and answers.