Diodes Incorporated
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DMMT5551S-7-F
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DMMT5551S-7-F

Introduction

The DMMT5551S-7-F is a versatile and widely used transistor that belongs to the category of small signal transistors. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the DMMT5551S-7-F.

Basic Information Overview

  • Category: Small Signal Transistor
  • Use: Amplification and Switching Applications
  • Characteristics: High Voltage, Low Power Dissipation, Small Package Size
  • Package: SOT-363
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Current - Collector (Ic) (Max): 100mA
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
  • Transition Frequency (ft): 150MHz

Detailed Pin Configuration

The DMMT5551S-7-F has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High voltage capability
  • Low power dissipation
  • Fast switching speed
  • Miniature SOT-363 package for space-constrained applications

Advantages and Disadvantages

Advantages

  • High voltage rating
  • Small package size
  • Suitable for high-frequency applications

Disadvantages

  • Relatively low current handling capacity
  • Limited power dissipation capability

Working Principles

The DMMT5551S-7-F operates based on the principles of NPN bipolar junction transistors. When a small current flows into the base (B) terminal, it controls a much larger current flowing between the collector (C) and emitter (E) terminals, allowing the transistor to amplify or switch electronic signals.

Detailed Application Field Plans

The DMMT5551S-7-F is commonly used in various electronic circuits such as: - Audio amplifiers - Signal amplification circuits - High-frequency oscillators - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the DMMT5551S-7-F include: - BC847C - MMBT5551LT1G - 2N5551

In summary, the DMMT5551S-7-F is a small signal transistor with high voltage capability, suitable for amplification and switching applications in various electronic circuits. Its compact size and functional features make it a popular choice for space-constrained designs.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av DMMT5551S-7-F i tekniska lösningar

  1. What is the DMMT5551S-7-F?

    • The DMMT5551S-7-F is a high-performance NPN bipolar transistor designed for general-purpose amplifier and switching applications.

  2. What are the key specifications of the DMMT5551S-7-F?

    • The DMMT5551S-7-F features a maximum collector current of 0.3A, a maximum collector-base voltage of 160V, and a maximum power dissipation of 225mW.

  3. In what technical solutions can the DMMT5551S-7-F be used?

    • The DMMT5551S-7-F can be used in various technical solutions such as audio amplifiers, signal amplification circuits, and low-power switching applications.

  4. What are the typical operating conditions for the DMMT5551S-7-F?

    • The DMMT5551S-7-F operates within a temperature range of -55°C to 150°C and is suitable for use in both analog and digital circuits.

  5. How does the DMMT5551S-7-F compare to similar transistors in its class?

    • The DMMT5551S-7-F offers low saturation voltage, high current gain, and low noise, making it a competitive choice for various technical solutions.

  6. What are the recommended circuit configurations for the DMMT5551S-7-F?

    • The DMMT5551S-7-F can be configured in common emitter, common base, or emitter follower configurations depending on the specific application requirements.

  7. Are there any important considerations when designing with the DMMT5551S-7-F?

    • It's important to consider proper biasing, thermal management, and voltage/current limitations to ensure optimal performance and reliability.

  8. Can the DMMT5551S-7-F be used in low-power battery-operated devices?

    • Yes, the DMMT5551S-7-F's low power dissipation and high current gain make it suitable for use in low-power and battery-operated devices.

  9. What are the typical failure modes of the DMMT5551S-7-F?

    • Common failure modes include thermal runaway, overvoltage stress, and excessive current leading to junction breakdown.

  10. Where can I find detailed application notes and reference designs for the DMMT5551S-7-F?

    • Detailed application notes and reference designs for the DMMT5551S-7-F can be found in the manufacturer's datasheet, application guides, and online technical resources.