S34ML04G200BHI000

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • High capacity (4GB)
  • High speed data transfer
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory for long-term data retention
• Packaging/Quantity: Individually packaged, quantity depends on customer requirements

Specifications

• Capacity: 4GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The S34ML04G200BHI000 has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V to 3.6V) | | 2 | GND | Ground | | 3 | HOLD# | Hold Input | | 4 | WP# | Write Protect Input | | 5-8 | NC | No Connection | | 9-16 | IO0-IO7 | SPI Data I/O | | 17 | CE# | Chip Enable Input | | 18 | CLE | Command Latch Enable | | 19 | ALE | Address Latch Enable | | 20 | RE# | Read Enable Input | | 21-24 | NC | No Connection | | 25-32 | IO8-IO15 | SPI Data I/O | | 33-40 | NC | No Connection | | 41 | R/B# | Ready/Busy Output | | 42-48 | NC | No Connection |

Functional Features

• High-speed data transfer: The S34ML04G200BHI000 offers fast read and write speeds, making it suitable for applications that require quick data access.
• Reliable data storage: With a high endurance of 100,000 erase/program cycles and data retention of up to 10 years, this flash memory ensures long-term reliability.
• Low power consumption: The device operates at low power levels, conserving energy and extending battery life in portable devices.

Advantages and Disadvantages

Advantages

• Large capacity: The 4GB capacity allows for ample storage space for various types of data.
• High-speed performance: The flash memory provides fast data transfer rates, enhancing overall system performance.
• Long-term data retention: The S34ML04G200BHI000 can retain data for up to 10 years, ensuring data integrity over extended periods.

Disadvantages

• Limited erase/program cycles: Although the device offers a high endurance of 100,000 cycles, frequent write operations may eventually wear out the memory cells.
• Relatively high cost: Compared to lower capacity flash memories, the S34ML04G200BHI000 may have a higher price due to its larger storage capacity.

Working Principles

The S34ML04G200BHI000 utilizes NAND flash memory technology. It stores data by trapping electrons in floating gate transistors. When a voltage is applied, the trapped electrons are released, allowing data to be read. To write data, a higher voltage is applied, which traps electrons in the floating gate. This process enables non-volatile data storage.

Detailed Application Field Plans

The S34ML04G200BHI000 is commonly used in various electronic devices, including: - Smartphones and tablets - Solid-state drives (SSDs) - Digital cameras - Gaming consoles - Automotive infotainment systems

Detailed and Complete Alternative Models

• S34ML02G100BHI000: 2GB capacity, similar specifications to S34ML04G200BHI000
• S34ML08G400BHI000: 8GB capacity, similar specifications to S34ML04G200BHI000
• S34ML16G800BHI000: 16GB capacity, similar specifications to S34ML04G200BHI000

These alternative models offer different storage capacities while maintaining similar characteristics and functionality.

Word count: 536 words