Cypress Semiconductor Corp
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S29GL128S10TFIV20
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S29GL128S10TFIV20

Basic Information Overview

  • Category: Flash Memory
  • Use: Data storage in electronic devices
  • Characteristics:
    • High capacity (128 gigabits)
    • High speed (10 nanoseconds access time)
    • Low power consumption
  • Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
  • Essence: Non-volatile memory for reliable data retention
  • Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

  • Capacity: 128 gigabits
  • Access Time: 10 nanoseconds
  • Voltage Range: 2.7V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Organization: 16M words x 8 bits or 8M words x 16 bits

Detailed Pin Configuration

The S29GL128S10TFIV20 has a total of 56 pins. The pin configuration is as follows:

  1. VCCQ
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. DQ0
  27. DQ1
  28. DQ2
  29. DQ3
  30. DQ4
  31. DQ5
  32. DQ6
  33. DQ7
  34. DQ8
  35. DQ9
  36. DQ10
  37. DQ11
  38. DQ12
  39. DQ13
  40. DQ14
  41. DQ15
  42. WE#
  43. CE#
  44. RE#
  45. WP#
  46. BYTE#
  47. RY/BY#
  48. VSSQ
  49. VCC
  50. VSS
  51. NC
  52. NC
  53. NC
  54. NC
  55. NC
  56. NC

Functional Features

  • High-speed data access
  • Reliable and durable non-volatile memory
  • Low power consumption for energy efficiency
  • Easy integration into electronic devices
  • Wide operating temperature range for various environments

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast access time
  • Low power consumption
  • Reliable data retention

Disadvantages

  • Higher cost compared to lower capacity flash memory options
  • Limited compatibility with certain devices due to package type

Working Principles

The S29GL128S10TFIV20 is based on NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can retain the information even when power is removed. The stored data can be accessed by sending appropriate signals through the pins of the device.

Detailed Application Field Plans

The S29GL128S10TFIV20 is widely used in various electronic devices that require high-capacity and reliable data storage. Some application fields include: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Networking equipment - Automotive infotainment systems

Detailed and Complete Alternative Models

  1. S29GL064S10TFIV20: 64 gigabit capacity, same characteristics and package as S29GL128S10TFIV20.
  2. S29GL256S10TFIV20: 256 gigabit capacity, same characteristics and package as S29GL128S10TFIV20.
  3. S29GL512S10TFIV20: 512 gigabit capacity, same characteristics and package as S29GL128S10TFIV20.

(Note: The above alternative models are examples and not an exhaustive list.)

This entry provides a comprehensive overview of the S29GL128S10TFIV20 flash memory product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av S29GL128S10TFIV20 i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of S29GL128S10TFIV20 in technical solutions:

  1. Q: What is the S29GL128S10TFIV20? A: The S29GL128S10TFIV20 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 128 megabits (16 megabytes) and operates at a voltage of 2.7V to 3.6V.

  2. Q: What are the typical applications of S29GL128S10TFIV20? A: The S29GL128S10TFIV20 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL128S10TFIV20? A: The S29GL128S10TFIV20 uses a parallel interface with a 16-bit data bus and supports both asynchronous and synchronous operations.

  4. Q: What is the maximum operating frequency of S29GL128S10TFIV20? A: The S29GL128S10TFIV20 can operate at a maximum frequency of 50 MHz, allowing for fast data transfer rates.

  5. Q: Does S29GL128S10TFIV20 support hardware or software write protection? A: Yes, the S29GL128S10TFIV20 supports both hardware and software write protection mechanisms to prevent accidental modification of data.

  6. Q: Can S29GL128S10TFIV20 be used for code storage in microcontrollers? A: Yes, the S29GL128S10TFIV20 is suitable for storing program code in microcontrollers, providing non-volatile storage for firmware.

  7. Q: What is the endurance of S29GL128S10TFIV20? A: The S29GL128S10TFIV20 has a typical endurance of 100,000 program/erase cycles, ensuring reliable and long-lasting operation.

  8. Q: Does S29GL128S10TFIV20 support sector erase operations? A: Yes, the S29GL128S10TFIV20 supports sector erase operations, allowing for efficient erasure of specific memory regions.

  9. Q: Can S29GL128S10TFIV20 operate in harsh environments? A: Yes, the S29GL128S10TFIV20 is designed to withstand extended temperature ranges and is suitable for use in rugged environments.

  10. Q: Is S29GL128S10TFIV20 compatible with other flash memory devices? A: Yes, the S29GL128S10TFIV20 is compatible with other flash memory devices that adhere to industry-standard interfaces and protocols.

Please note that these answers are general and may vary depending on the specific implementation and requirements of your technical solution.