CY7C1320BV18-250BZI

Product Overview

Category

The CY7C1320BV18-250BZI belongs to the category of high-speed synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Speed: The CY7C1320BV18-250BZI operates at a high clock frequency, allowing for rapid data access.
• Large Capacity: With a capacity of 2 megabits (256 kilobytes), this SRAM chip can store a significant amount of data.
• Low Power Consumption: The device is designed to minimize power consumption, making it suitable for battery-powered devices.
• Reliable Performance: The CY7C1320BV18-250BZI offers robust performance with low latency and high bandwidth.

Package

This SRAM chip is available in a Ball Grid Array (BGA) package, which provides a compact form factor and facilitates easy integration into circuit boards.

Essence

The essence of the CY7C1320BV18-250BZI lies in its ability to provide high-speed and reliable data storage, enabling efficient operation of electronic devices.

Packaging/Quantity

The CY7C1320BV18-250BZI is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

• Organization: 256K x 8 bits
• Voltage Supply: 1.8V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years

Detailed Pin Configuration

The CY7C1320BV18-250BZI has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. VDDQ
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSSQ
21. VDDQ
22. DQ16
23. DQ17
24. DQ18
25. DQ19
26. DQ20
27. DQ21
28. DQ22
29. DQ23
30. VSSQ
31. VDDQ
32. DQ24
33. DQ25
34. DQ26
35. DQ27
36. DQ28
37. DQ29
38. DQ30
39. DQ31
40. VSSQ
41. VDD
42. WE#
43. CAS#
44. RAS#
45. OE#
46. CKE
47. CS#
48. VSS

Functional Features

• High-Speed Operation: The CY7C1320BV18-250BZI offers fast access times, allowing for efficient data retrieval and storage.
• Low Power Consumption: This SRAM chip is designed to minimize power consumption, making it suitable for energy-efficient applications.
• Easy Integration: The BGA package and standard pin configuration facilitate easy integration into circuit designs.
• Reliable Performance: The CY7C1320BV18-250BZI provides reliable and consistent performance, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High-speed operation enables rapid data access.
• Large capacity allows for storing a significant amount of data.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain legacy systems that require different voltage levels or pin configurations.
• Relatively higher cost compared to other types of memory chips with similar capacities.

Working Principles

The CY7C1320BV18-250BZI operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the data is lost when power is removed. The chip utilizes a synchronous interface, allowing for high-speed data transfers between the memory and the host device. The SRAM cells within the chip retain data as long as power is supplied, enabling fast read and write operations.

Detailed Application Field Plans

The CY7C1320BV18-250BZ