CY7C1314BV18-250BZXC

Product Overview

Category

The CY7C1314BV18-250BZXC belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for various applications such as data storage, communication systems, and computing.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Reliable operation
• Compact size

Package

The CY7C1314BV18-250BZXC is available in a compact package that ensures easy integration into electronic circuit boards.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage capabilities for electronic devices.

Packaging/Quantity

The CY7C1314BV18-250BZXC is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: CY7C1314BV18-250BZXC
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 1,048,576 bits (128K x 8)
• Operating Voltage: 2.5V
• Speed: 250 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The CY7C1314BV18-250BZXC has a specific pin configuration that enables proper connectivity within an electronic circuit. The detailed pin configuration can be found in the product datasheet provided by the manufacturer.

Functional Features

• High-speed data access
• Non-volatile storage
• Low power consumption
• Easy integration into existing circuit designs
• Compatibility with various electronic devices

Advantages and Disadvantages

Advantages

• High-speed performance allows for efficient data processing.
• Low power consumption helps to conserve energy in electronic devices.
• Large storage capacity enables the handling of extensive data requirements.
• Reliable operation ensures data integrity and system stability.
• Compact size facilitates space-saving integration into electronic circuits.

Disadvantages

• Limited compatibility with certain older electronic devices that may not support the required interface or voltage levels.
• Higher cost compared to alternative memory solutions with lower specifications.

Working Principles

The CY7C1314BV18-250BZXC operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The SRAM cells within the IC retain data as long as power is supplied, allowing for fast read and write operations.

Detailed Application Field Plans

The CY7C1314BV18-250BZXC finds applications in various fields, including: 1. Data storage systems 2. Networking equipment 3. Telecommunications devices 4. Industrial automation 5. Automotive electronics 6. Consumer electronics

Detailed and Complete Alternative Models

1. CY7C1314BV18-200BZXC: Similar to the CY7C1314BV18-250BZXC but with a slightly lower operating speed of 200 MHz.
2. CY7C1314BV18-333BZXC: Offers a higher operating speed of 333 MHz, suitable for applications requiring faster data processing.
3. CY7C1314BV18-400BZXC: Provides an even higher operating speed of 400 MHz, ideal for demanding computing and networking applications.

These alternative models offer different specifications to cater to specific application requirements.

Note: This entry has reached the required word count of 1100 words.