NE856M02-AZ

Introduction

NE856M02-AZ is a semiconductor component that belongs to the category of RF transistors. This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of NE856M02-AZ.

Basic Information Overview

• Category: RF Transistor
• Use: Amplification of radio frequency signals
• Characteristics: High gain, low noise figure, and excellent linearity
• Package: TO-72 metal can package
• Essence: Silicon NPN epitaxial planar transistor
• Packaging/Quantity: Typically available in reels of 1000 units

Specifications

• Frequency Range: 400 MHz to 800 MHz
• Power Dissipation: 300 mW
• Collector Current: 30 mA
• Collector-Emitter Voltage: 15 V
• Transition Frequency (fT): 1.5 GHz
• Noise Figure: 2 dB

Detailed Pin Configuration

NE856M02-AZ has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

• High gain: Provides significant signal amplification.
• Low noise figure: Minimizes signal degradation during amplification.
• Excellent linearity: Maintains signal fidelity during amplification.

Advantages and Disadvantages

Advantages

• High gain for signal amplification
• Low noise figure for minimal signal degradation
• Excellent linearity for maintaining signal fidelity

Disadvantages

• Limited frequency range compared to some other RF transistors
• Relatively low power dissipation capability

Working Principles

NE856M02-AZ operates based on the principles of bipolar junction transistors. When a small input signal is applied to the base terminal, it controls the larger output current flowing between the collector and emitter terminals, effectively amplifying the input signal.

Detailed Application Field Plans

NE856M02-AZ is commonly used in the following applications: - Radio frequency amplifiers - Signal processing circuits - Communication systems

Detailed and Complete Alternative Models

Some alternative models to NE856M02-AZ include: - NE856M04-AZ: Higher frequency range variant - NE856M01-AZ: Lower frequency range variant - NE856M03-AZ: Enhanced power dissipation variant

In conclusion, NE856M02-AZ is a versatile RF transistor with high gain, low noise figure, and excellent linearity, making it suitable for various radio frequency amplification applications.

[Word Count: 366]