HSMS-282N-TR1G

Introduction

The HSMS-282N-TR1G is a high-frequency surface mount Schottky diode designed for use in various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Components
• Use: The HSMS-282N-TR1G is commonly used in RF and microwave applications, such as mixers, detectors, and multipliers.
• Characteristics: This diode offers low barrier height and low series resistance, making it suitable for high-frequency operations. It also exhibits low junction capacitance and fast switching speeds.
• Package: The HSMS-282N-TR1G is available in a surface mount SOT-23 package.
• Essence: Its essence lies in providing reliable and efficient signal rectification and detection in high-frequency circuits.
• Packaging/Quantity: The diode is typically supplied in reels with a specified quantity per reel.

Specifications

• Forward Voltage: 0.3V at 1mA
• Reverse Voltage: 15V
• Maximum Continuous Current: 1A
• Capacitance: 0.6pF at 0V, 1MHz

Detailed Pin Configuration

The HSMS-282N-TR1G has three pins: Anode, Cathode, and No Connection (NC). The pinout configuration is as follows: - Anode (A) - Pin 1 - Cathode (K) - Pin 2 - No Connection (NC) - Pin 3

Functional Features

• High-Frequency Operation: The diode is optimized for use in high-frequency circuits, offering fast response times and low parasitic effects.
• Low Barrier Height: This feature enables efficient signal rectification and detection in RF and microwave applications.
• Stable Performance: The diode maintains stable electrical characteristics over a wide range of operating conditions.

Advantages and Disadvantages

Advantages

• High-speed switching capability
• Low forward voltage drop
• Compact surface mount package
• Wide operating temperature range

Disadvantages

• Limited reverse voltage tolerance
• Sensitivity to electrostatic discharge (ESD)

Working Principles

The HSMS-282N-TR1G operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for fast charge carrier transport and low forward voltage drop. When biased in the forward direction, it efficiently rectifies and detects high-frequency signals.

Detailed Application Field Plans

The HSMS-282N-TR1G finds extensive use in the following application fields: - RF Mixers - RF Detectors - Frequency Multipliers - High-Frequency Signal Rectification

Detailed and Complete Alternative Models

• HSMS-282C-TR1G
• HSMS-282E-TR1G
• HSMS-282F-TR1G
• HSMS-282K-TR1G

These alternative models offer similar performance characteristics and are compatible replacements for the HSMS-282N-TR1G in various applications.

In conclusion, the HSMS-282N-TR1G is a versatile and reliable high-frequency Schottky diode that caters to the demanding requirements of RF and microwave circuitry. Its unique combination of characteristics makes it an essential component in modern electronic designs.

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