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BLF7G10LS-250,118
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BLF7G10LS-250,118

Product Overview

Category

The BLF7G10LS-250,118 belongs to the category of RF power transistors.

Use

It is used for high-frequency amplification in various applications such as wireless communication systems and radar systems.

Characteristics

  • High power gain
  • High efficiency
  • Broadband capability
  • High linearity

Package

The BLF7G10LS-250,118 is typically available in a compact and rugged SOT539A package.

Essence

This product is essential for achieving high-power amplification in RF applications.

Packaging/Quantity

The BLF7G10LS-250,118 is usually supplied in reels with a specific quantity per reel, as per the manufacturer's specifications.

Specifications

  • Frequency Range: 0.1 - 3 GHz
  • Output Power: 10 W
  • Gain: 13 dB
  • Efficiency: 55%
  • Voltage: 28 V
  • Current: 1.5 A

Detailed Pin Configuration

The BLF7G10LS-250,118 has a pin configuration as follows: 1. Source 2. Gate 3. Drain 4. Ground

Functional Features

  • High power gain for signal amplification
  • Wide frequency range coverage
  • High efficiency for reduced power consumption
  • Excellent linearity for accurate signal reproduction

Advantages

  • Suitable for broadband applications
  • Compact and rugged package
  • High efficiency leads to lower power dissipation
  • High linearity ensures faithful signal reproduction

Disadvantages

  • May require careful impedance matching for optimal performance
  • Higher cost compared to lower power transistors
  • Sensitive to voltage and current fluctuations

Working Principles

The BLF7G10LS-250,118 operates based on the principles of field-effect transistors, utilizing its high-power gain and efficiency to amplify RF signals while maintaining linearity.

Detailed Application Field Plans

This transistor is ideal for use in: - Base stations for cellular networks - Radar systems - Microwave links - Broadcast transmitters - Satellite communications

Detailed and Complete Alternative Models

Some alternative models to BLF7G10LS-250,118 include: - BLF888A (NXP Semiconductors) - MRF13750H (Freescale Semiconductor) - PTFA211501E (Infineon Technologies)

In conclusion, the BLF7G10LS-250,118 is a high-performance RF power transistor suitable for a wide range of high-frequency amplification applications, offering high power gain, efficiency, and linearity.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av BLF7G10LS-250,118 i tekniska lösningar

  1. What is the operating frequency range of BLF7G10LS-250,118?

    • The operating frequency range of BLF7G10LS-250,118 is from 2.5 GHz to 2.7 GHz.

  2. What is the typical gain of BLF7G10LS-250,118?

    • The typical gain of BLF7G10LS-250,118 is around 14 dB.

  3. What is the maximum output power of BLF7G10LS-250,118?

    • The maximum output power of BLF7G10LS-250,118 is approximately 10 W.

  4. What is the recommended supply voltage for BLF7G10LS-250,118?

    • The recommended supply voltage for BLF7G10LS-250,118 is 28 V.

  5. What is the typical efficiency of BLF7G10LS-250,118?

    • The typical efficiency of BLF7G10LS-250,118 is around 55%.

  6. What are the typical applications for BLF7G10LS-250,118?

    • BLF7G10LS-250,118 is commonly used in RF energy applications, such as industrial heating and drying systems.

  7. Does BLF7G10LS-250,118 require external matching networks?

    • Yes, BLF7G10LS-250,118 requires external matching networks for optimal performance.

  8. What is the package type of BLF7G10LS-250,118?

    • BLF7G10LS-250,118 comes in a ceramic SMD package.

  9. Is BLF7G10LS-250,118 RoHS compliant?

    • Yes, BLF7G10LS-250,118 is RoHS compliant.

  10. What are the key thermal characteristics of BLF7G10LS-250,118?

    • BLF7G10LS-250,118 has a low thermal resistance and is designed for efficient heat dissipation in high-power applications.