Ampleon USA Inc.
Bild kan vara representation.
Se specifikationer för produktinformation.
BLF10M6160U
Visa detalj Datablad

BLF10M6160U

Product Overview

Category: Semiconductor
Use: RF Power Transistor
Characteristics: High power, high frequency
Package: SOT539A
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: Tape and reel, 800 units

Specifications

  • Frequency Range: 960-1215 MHz
  • Output Power: 60W
  • Efficiency: 70%
  • Gain: 17dB
  • Voltage: 50V
  • Current: 14A
  • Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source
  4. Ground

Functional Features

  • High power density
  • Broadband performance
  • High efficiency
  • Excellent thermal stability

Advantages and Disadvantages

Advantages: - High power output - Wide frequency range - Compact package size

Disadvantages: - Higher cost compared to traditional transistors - Sensitive to voltage spikes

Working Principles

The BLF10M6160U utilizes GaN technology to efficiently amplify radio frequency signals. When a voltage is applied to the gate terminal, it creates an electric field in the channel, allowing current to flow from the drain to the source, amplifying the input signal.

Detailed Application Field Plans

The BLF10M6160U is ideal for use in high-power RF applications such as base stations, radar systems, and industrial heating equipment. Its high efficiency and wide frequency range make it suitable for various communication and industrial applications.

Detailed and Complete Alternative Models

  1. BLF888A - RF Power Transistor, 80W, 30-512 MHz
  2. BLF578XR - RF Power Transistor, 600W, 470-860 MHz
  3. BLF2425M8L - RF Power Transistor, 25W, 2400-2500 MHz

This completes the entry for BLF10M6160U, providing comprehensive information on its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av BLF10M6160U i tekniska lösningar

  1. What is BLF10M6160U?

    • BLF10M6160U is a high-power LDMOS RF transistor designed for use in applications such as industrial, scientific, and medical (ISM) equipment.

  2. What is the maximum power output of BLF10M6160U?

    • The maximum power output of BLF10M6160U is typically around 160 watts.

  3. What frequency range does BLF10M6160U cover?

    • BLF10M6160U covers a frequency range of 960-1215 MHz.

  4. What are the typical applications for BLF10M6160U?

    • Typical applications for BLF10M6160U include RF energy generators, plasma lighting, and industrial heating systems.

  5. What is the operating voltage range for BLF10M6160U?

    • The operating voltage range for BLF10M6160U is typically between 32-50 volts.

  6. What cooling methods are recommended for BLF10M6160U?

    • Active cooling methods such as forced air or liquid cooling are recommended for efficient thermal management of BLF10M6160U.

  7. What are the key performance specifications of BLF10M6160U?

    • Key performance specifications of BLF10M6160U include high efficiency, high gain, and excellent ruggedness.

  8. Can BLF10M6160U be used in pulsed applications?

    • Yes, BLF10M6160U is suitable for use in pulsed applications with appropriate pulse width and duty cycle considerations.

  9. What are the typical input and output impedance values for BLF10M6160U?

    • The typical input and output impedance values for BLF10M6160U are 50 ohms.

  10. Are there any specific layout or matching considerations when using BLF10M6160U?

    • Yes, proper RF layout and matching techniques should be employed to ensure optimal performance and stability when using BLF10M6160U in technical solutions.