S-1000N46-N4T1G

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: NPN Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Collector-Base Voltage (Vcbo): 60V
• Collector-Emitter Voltage (Vceo): 50V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 500mA
• Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-1000N46-N4T1G transistor has three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

The S-1000N46-N4T1G is a high-gain NPN transistor designed for signal amplification applications. It offers low noise characteristics, making it suitable for use in audio amplifiers, radio frequency circuits, and other sensitive electronic systems. The transistor operates within a wide temperature range (-55°C to +150°C) and can handle a collector current of up to 500mA.

Advantages and Disadvantages

Advantages: - High gain amplification - Low noise performance - Wide operating temperature range - Compact TO-92 package

Disadvantages: - Limited power dissipation capability (625mW) - Moderate transition frequency (250MHz)

Working Principles

The S-1000N46-N4T1G operates based on the principles of bipolar junction transistors (BJTs). It consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current to the base terminal, the transistor allows a larger current to flow between the collector and emitter terminals. This amplification effect is utilized in various electronic circuits to boost weak signals.

Detailed Application Field Plans

The S-1000N46-N4T1G transistor finds applications in the following fields:

1. Audio Amplifiers: The high gain and low noise characteristics make it suitable for audio signal amplification in devices such as headphones, speakers, and audio receivers.
2. Radio Frequency Circuits: The transistor's performance at high frequencies (up to 250MHz) makes it ideal for use in RF circuits, including radio transmitters and receivers.
3. Sensor Interfaces: The S-1000N46-N4T1G can be used in sensor interface circuits to amplify weak signals from sensors such as temperature sensors, pressure sensors, and light sensors.

Detailed and Complete Alternative Models

1. S-9018H: NPN Transistor, TO-92 package, similar characteristics
2. BC547: NPN Transistor, TO-92 package, comparable specifications
3. 2N3904: NPN Transistor, TO-92 package, widely available alternative

These alternative models offer similar functionality and can be used as substitutes for the S-1000N46-N4T1G transistor in various applications.

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